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FM2G400US60
September 2001
IGBT
FM2G400US60
Molding Type Module
General Description
Fairchild Insulated Gate Bipolar Transistor (IGBT) Power Module provides low conduction and switching losses as well as short circuit ruggedness. It's designed for the applications such as motor control, Uninterruped Power Supply (UPS) and general inverters where short-circuit ruggedness is a required feature.
Features
* * * * * * UL Certified No.E209204 Short Circuit rated 10us @ TC = 100C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 400A High Input Impedance Fast & Soft Anti-Parallel FWD
Package Code : 7PM-EA
E1/C2
Application
* * * * * AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls UPS
C1 E2
G1
E1
G2
E2
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque
TC = 25C unless otherwise noted
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw : M6 Mounting Screw : M6
@ TC = 25C @ TC = 25C @ TC = 100C @ TC = 25C
@ AC 1minute
FM2G400US60 600 20 400 800 400 800 10 1560 -40 to +150 -40 to +125 2500 2.5 2.5
Units V V A A A A us W C C V N.m N.m
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
(c)2001 Fairchild Semiconductor Corporation
FM2G400US60 Rev. A
FM2G400US60
Electrical Characteristics of IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage VGE = VCE, IC = 400mA IC = 400A, VGE = 15V 5.0 -6.0 2.2 8.5 2.8 V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---66000 3600 1980 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge --------------10 ---870 550 720 178 36 22 58 1230 580 890 190 52 24 75 -1800 350 750 ---250 --116 --------2700 --ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ us nC nC nC
VCC = 300 V, IC = 400A, RG = 1.6, VGE = 15V Inductive Load, TC = 25C
VCC = 300 V, IC = 400A, RG = 1.6, VGE = 15V Inductive Load, TC = 125C
@ TC =
VCC = 300 V, VGE = 15V 100C
VCE = 300 V, IC = 400A, VGE = 15V
(c)2001 Fairchild Semiconductor Corporation
FM2G400US60 Rev. A
FM2G400US60
Electrical Characteristics of DIODE T
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
C
= 25C unless otherwise noted
Test Conditions TC = 25C IF = 400A TC = 100C TC = 25C TC = 100C IF = 400A di / dt = 600 A/us TC = 25C TC = 100C TC = 25C TC = 100C
Min. ---------
Typ. 1.9 1.8 90 130 35 76 1575 4940
Max. 2.8 -130 -46 -2960 --
Units V ns A nC
Thermal Characteristics
Symbol RJC RJC RCS Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module Typ. --0.04 -Max. 0.08 0.18 -400 Units C/W C/W C/W g
(c)2001 Fairchild Semiconductor Corporation
FM2G400US60 Rev. A
FM2G400US60
800 11V
800
C O L L E C T O R C U R R E N T Ic [A ]
15V 20V
Ic [A ]
13V
12V
Tc = 25 600
600
CURRENT
125
V GE = 1 0V 400
C O LLEC TO R
400
200
200
C o m m o n E m itte r T c = 25 0 0 2 4 6 8 10 0 0 1 2 3
C o m m o n E m itte r Vge = 15V 4 5
C O L L E C T O R - E M IT T E R V O L T A G E V C E [V ]
C O L L E C T O R - E M IT T E R
VO LTAG E
V C E [V ]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
800 20 13 12 15 11
800 C o m m o n E m it t e r V ce = 5V
C O L L E C T O R C U R R E N T Ic [A ]
C O LLEC TO R C U R R EN T
600
I c [A ]
600
Tc = 25
125
V G E = 10 V 400
400
200
200
C o m m o n E m itte r Tc = 125 0 0 2 4 6 8 10
0 0 4 8 12 16 20
C O L L E C T O R -E M IT T E R V O L T A G E V C E [V ]
G A T E -E M IT T E R
VO LTAG E
V G E [V ]
Fig 3. Typical Output Characteristics
Fig 4. Collector Current vs. Gate-Emitter Voltage
16 C o m m o n E m itt e r T c = 25
16 C o m m o n E m it t e r Tc = 125
C O L L E C T O R - E M IT T E R V O L T A G] E V [V
8
C O L L E C T O R - E M IT T E R
CE
CE
12
V O L T V ]G E [A
V
12 8
800 4 400 Ic = 1 6 0 A
800 4 400
Ic = 1 6 0 A
0 0 4 8 12 16 20
0 0 4 8 12 16 20
G A T E - E M IT T E R
V O L T A G E V G E [V ]
G A T E -E M IT T E R
VO LTAG E
V G E [V ]
Fig 5. Saturation Voltage vs. VGE
(c)2001 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
FM2G400US60 Rev. A
FM2G400US60
100000 C ie s
C o m m o n E m itte r V cc = 300V Vge = 15V Ic = 4 0 0 A
C A P A C IT A N C E C [p F ]
S W I T C H IN G T IM E [ ] ,t t
on
n
t d (o n) 1
10000
C oes
tr
C re s C o m m o n E m itte r V ge = 0V f = 1M hz Tc = 25 1000 1 10 30 0 .3 1 10
: Tc = 25 : Tc = 125
C O L L E C T O R - E M IT T E R
V O L T A G E V C E [V ]
G A T E R E S IS T A N C E
R g [
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
100 Vcc = 300V Ic = 4 0 0 A Esw
80
S W IT C H IN G T IMo ff , tt [ ] Ef
1
E N E R G Y [m J ]
t d(o ff)
60 Eon
40 E o ff
tf 20 0 .1 C o m m o n E m itte r Vcc = 300V Vge = 15V Ic = 4 0 0 A 1 10
: T c = 25 : T c = 125
0 .0 5
0 0 5 10 15 20
G A T E R E S IS T A N C E R G [
]
G A T E - E M IT T E R
R E S IS T A N C E
R g [
]
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1
C o m m o n E m itte r Vcc = 300V Vge = 15V R g = 1 .6
S W IT C H IN G T IM d(on)t, tr [ ] E
S W IT C H IN G T IM E , tt [ ]
t d(o n)
1 t d (o ff)
0.1 tr
C om m on E m itte r V c c = 30 0V V g e = 1 5V R g = 1 .6 0.0 1 30 100
d (o f f)
f
0 .1 : T c = 2 5 : T c = 1 25 400 0 .0 5 40
tf : T c = 25 : T c = 125 100 400
C O L L E C T O R C U R R E N T Ic [A ]
C O L L E C T O R C U R R E N T Ic [A ]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2001 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
FM2G400US60 Rev. A
FM2G400US60
80 Esw
COLLECTOR-EMITTER VOLTAGE V CE [V]
Vcc = 300V R g = 1 .6 Tc = 125
400 Common Emitter RL = 0.75 Tc = 25 300
16 14 12 10
60
Eon 40
200
8 6
E o ff 20
100
4 2
0 0 100 200 300 400
0 0 500 1000 1500
C O L L E C T O R - E M IT T E R C U R R E N T Ic [A ]
0
CHARGE QG [nC]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
1000 Ic M A X . (P u lse d ) 50
1 Tc = 25
300 Ic M A X . (C o n tin u ou s ) 1m s 100
T h e r m a l R e s p o n s e [Z t h jc ] [ /W ]
C O LLE C T O R C U R R E N T Ic [A ]
0 .1
0 .5 0 .2 0 .1
100
D I O D E S ta g e
30
D C O p e ra tio n
0 .0 1
0 .0 5 0 .0 2 0 .0 1
10 1 E -3
s in g le p u ls e
3
3 E -4 0 .3 1 3 10 30 100 300 1000 10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
C O L L E C T O R -E M IT T E R V O L T A G E V C E [V ]
R e c t a n g u la r P u ls e D u r a t io n [ s e c ]
Fig 15. SOA Characteristics
Fig 16. Transient Thermal Impedance
1
T j 1 25 Vge = 15V R g = 1 .6
C O LL E C T O R C U R R E N T Ic [A ]
80 0
T h e r m a l R e s p o n s e [Z t h jc ] [ /W ]
10 0 0
Tc = 25
0 .1 0 .5 0 .2 0 .0 1 0 .1 0 .0 5 0 .0 2 0 .0 1 1 E -3 s in g le p u ls e IG B T S t a g e
60 0
40 0
20 0
0 0 10 0 20 0 30 0 40 0 50 0 60 0 70 0
1 E -4 10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
C O LL E C T O R -E M IT T E R V O L T A G E V CE [V ]
R e c t a n g u la r P u ls e D u r a t io n [ s e c ]
Fig 17. RBSOA Characteristics
(c)2001 Fairchild Semiconductor Corporation
Fig 18. Transient Thermal Impedance
FM2G400US60 Rev. A
GATE-EMITTER VOLTAGE V GE [V]
1 1
E N E R G Y [m J ]
FM2G400US60
R E C O V E R Y C U R R E N T Irr
T r r [x 1 0 n s ]
100 C o m m o n C a th o d e d i/ d t = - 8 0 0 A / Irr
800 C o m m o n C a th o d e V ge = 0V
R E C O V E R Y T IM E
C U R R E [A T I N]
T c = 25 600 125
50
F
30
400
FORW ARD
T rr
REVERSE
200
REVERSE
10
PEAK
0 0 1 2 3 4
5 0 100 200 300
: Tc = 25 : Tc = 125 400
FORW ARD
VO LTAG E
V F [V ]
FO RW ARD
CURRENT
IF [A ]
Fig 19. Forward Characteristics
Fig 20. Reverse Recovery Characteristics
(c)2001 Fairchild Semiconductor Corporation
FM2G400US60 Rev. A
FM2G400US60
Package Dimension
7PM-EA
Dimensions in Millimeters
(c)2001 Fairchild Semiconductor Corporation FM2G400US60 Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R)
VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H4

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